CPDT6-5V0U_12 Datasheet, PDF (1/4 Pages) Comchip Technology – SMD ESD Protection Diode

SMD ESD Protection Diode
CPDT6-5V0U
RoHS Device
Features
-IEC61000-4-2 8kV(Contact), 15kV(air).
-Surface mount package.
-High component density.
Mechanical data
-Case: SOT-23-6 Standard package, molded
plastic.
-Terminals: Gold plated, solderable per MIL-
STD-750D, method 2026.
-Mounting position: Any.
-Weight: 0.015 gram (approx.).
Marking: E5U
654
123
654
. ^E5U
1 23
SOT-23-6
0.067(1.70)
0.059(1.50)
0.045(1.15)
0.041(1.05)
0.119(3.02)
0.111(2.82)
0.079(2.00)
0.071(1.80)
0.008(0.20)
0.004(0.10)
0.116(2.95)
0.104(2.65)
0.020(0.50)
0.012(0.30)
0.004(0.10)max
0.012(0.30)min
Dimensions in inches and (millimeter)
Maximum Rating and Electrical Characteristics
(at TA=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Diode breakdown voltage
VBD
IR = 1mA
Leakage current
IL
VR = 3V
Forward voltage
Junction capacitance
VF
IF = 5uA
CT
VR = 0V,f = 1MHz
Clamping voltage
ESD capability
Peak pulse power
VC
ESD
PPP
IPP = 1A,TP=8/20us
IPP = 8A,TP=8/20us
C = 150PF, R = 300ohm,
forward and reverse 10 pulses
Operation temperature
TJ
Storage temperature
TSTG
Min ^Typ Max Unit
6.1
7.1
V
0.1
1.0
uA
1.2
V
60
80
pF
8
V
10
8
kV
80
W
125
°C
-55
150
°C
QW-BP005
Comchip Technology CO., LTD.
REV:E
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