CPDT-12VEU-HF Datasheet, PDF (1/4 Pages) Comchip Technology – SMD ESD Protection Diode

SMD ESD Protection Diode
CPDT-12VEU-HF
RoHS Device
Halogen Free
Features
- IEC 61000-4-2 (ESD) ; ±30 KV (Contact)
- Surface mount package.
- High component density.
- Low clamping voltage.
- Low leakage current.
Mechanical data
- Case: SOT-23 Standard package, molded
plastic.
- Terminals: Solderable per MIL-STD-750,
method 2026.
- Mounting position: Any.
- Weight: 0.0078 grams(approx.).
0.056(1.40)
0.047(1.20)
0.041(1.05)
0.035(0.90)
SOT-23
0.119(3.00)
0.110(2.80)
3
1
2
0.079(2.00)
0.071(1.80)
0.006(0.15)
0.003(0.08)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
Dimensions in inches and (millimeter)
Circuit diagram
3
Maximum Rating (at TA=25°C unless otherwise noted)
Parameter
Conditions
Peak pulse power
TP = 8/20us
Peak pulse current
ESD capability
Operation temperature range
TP = 8/20us
IEC 61000-4-2(air)
IEC 61000-4-2(contact)
Storage temperature range
Symbol
PPP
IPP
ESD
Tj
TSTG
1
2
Value
110
5
±30
-55~+125
-55~+150
Unit
W
A
kV
°C
°C
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Working peak reverse voltage
VRWM
12
V
Forward voltage
IF = 10mA
VF
0.8 1.2
V
Breakdown voltage
IT = 1mA
VBR
13.5 14.5 15.6
V
Reverse leakage current
VRWM = 12V
IR
IPP = 1A, TP = 8/20us
Clamping voltage
VC
IPP = 5A, TP = 8/20us
Junction capacitance
VR = 0V, f = 1MHz
CJ
Company reserves the right to improve product design , functions and reliability without notice.
QW-JP051
Comchip Technology CO., LTD.
<5
100
nA
18
V
22
60
pF
REV:A
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