CPDT-12V Datasheet, PDF (1/4 Pages) Comchip Technology – SMD ESD Protection Diode

SMD ESD Protection Diode
CPDT-12V ^{(RoHS Device)}
Features
Common anode ESD protection.
IEC61000-4-2 8kV(Contact), 15kV(air).
Surface mount package.
High component density.
Mechanical data
Case: SOT-23 Standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750D, method 2026.
Marking code:E12
Mounting position: Any.
Weight: 0.0078 gram(approx.).
SMD Diodes Specialist
SOT-23
0.056(1.40)
0.047(1.20)
0.119(3.00)
0.110(2.80)
3
1
2
0.079(2.00)
0.071(1.80)
0.041(1.05)
0.035(0.90)
0.006(0.15)
0.002(0.05)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.004(0.10) max
0.008(0.20) min
Dimensions in inches and (millimeter)
Maximum Rating and Electrical Characteristics
(at TA=25°C unless otherwise noted)
Parameter
Diode breakdown voltage
Conditions ^{Symbol Min Typ Max Unit}
IR = 1mA
VBD
13
17
V
Leakage current
VR = 12V
IL
0.1 2.0 uA
Junction capacitance
ESD capability
Clamping voltage
VR =0V,f =1MHz
IEC 61000-4-2(air)
IEC 61000-4-2(contact)
IPP = 1A,TP=8/20us
CT
ESD
VC
12
pF
16
kV
8
25
V
Peak pulse power
TP=8/20us
PPP
25
W
Operation temperature
Tj
125 °C
Storage temperature
TSTG
-55
150 °C
QW-BP023
Comchip Technology CO., LTD.
REV:A
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