CPDQT5V0-HF_15 Datasheet, PDF (1/3 Pages) Comchip Technology – Low Profile SMD ESD Protection Diode

Low Profile SMD ESD Protection Diode
CPDQT5V0-HF
RoHS Device
Halogen Free
Features
- IEC61000-4-2 Level 4 ESD protection.
- ESD Rating of Class 3 per Human Body Mode.
- Peak Power up to 150 Watts @ 8x20µs Pulse.
- Low Leakage current.
- Response Time is Typically <1ns
- Working Voltage: 5V
Mechanical data
- Case: 0402/SOD-882 small outline plastic package.
- Terminals: Matte tin plated, solderable per
MIL-STD-750, method 2026.
- Mounting position: Any.
- High temperature soldering guaranteed: 260°C/10 second.
- Weight: 0.001 gram(approx.).
Circuit Diagram
0402/SOD-882
0.041(1.05)
0.037(0.95)
0.005(0.12)
0.012(0.30)
0.008(0.20)
0.008(0.2)
0.026(0.65)
0.022(0.55)
0.015(0.37)MAX.
0.021(0.54)
0.017(0.44)
Dimensions in inches and (millimeter)
Maximum Rating and Electrical Characteristics
O
( at TA=25 C unless otherwise noted, VF=0.9V Max. @ IF=10mA for all types)
Parameter
Conditions ^Symbol Min ^Typ Max Unit
Maximum working Peak Reverse Voltage
VRWM
5.0
V
Maximum diode breakdown voltage
IR = 1mA
VBR
5.6
V
VR = 3.5V
Maximum reverse leakage current
IR
VR = 5V
0.3
µA
0.5
Junction capacitance
ESD capability
Clamping Voltage
VR =0V,f =1MHz
IEC 61000-4-2(air)
IEC 61000-4-2(Contact)
IPP = 5 A, tp=8/20us
IPP = 9.4 A, tp=8/20us
CT
ESD
ESD
Vc
Vc
15
pF
15
kV
8
kV
11.6
V
18.6
V
Peak Pulse Power
Maximum Junction temperature
TP=8/20us
PPK
Tj
-55
174
W
150 °C
Operation temperature range
TOP
-40
125 °C
Storage temperature range
TSTG
-55
155 °C
NOTES:
1. VBR is measured with a pulse test current IT at an ambient tem.perature of 25°C.
QW-JP037
Company reserves the right to improve product design , functions and reliability without notice.
Comchip Technology CO., LTD.
REV:A
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