CPDQC5V0USP-HF Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Low Capacitance ESD Protection Diode

SMD Low Capacitance ESD Protection Diode
CPDQC5V0USP-HF
RoHS Device
Halogen Free
Features
- Uni-directional ESD protection.
- IEC61000-4-2 Level 4 ESD protection.
- Surface mount package.
- Low capacitance.
- Low Leakage current.
- High component density.
Mechanical data
- Case: 0402C/SOD-923F standard package,
molded plastic.
- Terminals: Matte tin plated, solderable per
MIL-STD-750, method 2026.
- Marking Code: Cathode band & 5S
- Mounting position: Any.
- Weight: 0.001 gram(approx.).
Circuit diagram
0402C/SOD-923F
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
0.012(0.30)
0.008(0.20)
0.022(0.55)
0.018(0.45)
0.001(0.02)
Max.
0.022(0.55)
0.018(0.45)
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Value
Unit
Peak pulse power
TP = 8/20us
PPP
50
W
Peak pulse current
ESD capability
Operation temperature range
TP = 8/20us
IEC 61000-4-2(air)
IEC 61000-4-2(contact)
IPP
ESD
Tj
2.5
A
±15
kV
±8
-55~+150
°C
Storage temperature range
TSTG
-55~+150
°C
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Working peak reverse voltage
VRWM
5
V
Forward voltage
IF = 10mA
VF
1.5
V
Diode breakdown voltage
IT = 1mA
VBR
5.4
V
Reverse current
VRWM = 5V
IR
0.1
1.0
uA
Clamping voltage
Junction capacitance
IPP = 1A, TP = 8/20us
IPP = 2.5A, TP = 8/20us
VR = 0V, f = 1MHz
13
VC
V
20
CJ
0.6
0.9
pF
Company reserves the right to improve product design , functions and reliability without notice.
QW-G7063
Comchip Technology CO., LTD.
REV:B
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