CPDQC3V3C-HF Datasheet, PDF (1/5 Pages) Comchip Technology – SMD ESD Protection Diode

SMD ESD Protection Diode
CPDQC3V3C-HF
RoHS Device
Halogen Free
Features
- Bi-directional ESD protection.
- IEC 61000-4-2 (ESD) ; ±25 KV (Contact)
- ESD rating of Class 3B per Human Body Mode.
- Surface mount package.
- Ultra small SMD package:0402.
- High component density.
Mechanical data
- Case: 0402C/SOD-923F standard package,
molded plastic.
- Terminals: Matte tin plated, Solderable per
MIL-STD-750, method 2026.
- Marking Code: E3
- Mounting position: Any.
- Weight: 0.001 grams(approx.).
Circuit diagram
0402C/SOD-923F
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
0.012(0.30)
0.008(0.20)
0.022(0.55)
0.018(0.45)
0.001(0.02)
Max.
0.022(0.55)
0.018(0.45)
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Peak pulse power
TP = 8/20us
PPP
Peak pulse current
TP = 8/20us
IPP
ESD capability
IEC 61000-4-2(Air)
IEC 61000-4-2(Contact)
VESD
Operating temperature range
TJ
Storage temperature range
TSTG
Value
65
5
±25
-55 to +125
-55 to +125
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol Min
Working peak reverse voltage
VRWM
Diode breakdown voltage
IT = 1mA
VBR
3.6
Punch-through voltage
IPT = 2uA
VPT
3.5
Snap-back voltage
ISB = 50mA
VSB
2.8
Reverse leakage current
VRWM = 3.3V
IR
Clamping voltage
IPP = 1 A, Tp = 8/20us
VC
IPP = 5 A, Tp = 8/20us
VC
Junction capacitance
VR = 0 V, f = 1MHz
CJ
Typ
0.05
6
Max
3.3
0.5
8
13
6
Company reserves the right to improve product design , functions and reliability without notice.
QW-G7086
Comchip Technology CO., LTD.
Unit
W
A
kV
°C
°C
Unit
V
V
V
V
uA
V
V
pF
REV:C
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