CPDQ5V0USP-HF Datasheet, PDF (1/5 Pages) Comchip Technology – Ultra Low Capacitance SMD ESD Protection Diode

Ultra Low Capacitance SMD ESD Protection Diode
CPDQ5V0USP-HF
RoHS Device
Halogen Free
Features
- IEC61000-4-2 Level 4 ESD protection.
- ESD Rating of Class 3(>16kV) per Human Body Mode.
- Ultra low capacitance 0.5 pF
- Low clamping voltage.
- Low body height: 0.016”(0.4mm)
Mechanical data
- Epoxy: Meets UL 94V-0
- Case: 0402/SOD-923F small outline plastic package.
molded plastic.
- Terminals: Matte tin plated, solderable per
MIL-STD-750,method 2026.
- Mounting position: Any.
- High temperature soldering guaranteed: 260°C/10 second.
- Weight: 0.001mgram(approx.).
0402/SOD-923F
0.041(1.05)
0.037(0.95)
0.033(0.85)
0.030(0.75)
0.026(0.65)
0.022(0.55)
0.007(0.17)
0.003(0.07)
0.010(0.25)
0.006(0.15)
0.006(0.15)
0.002(0.05)
0.016(0.40)
0.013(0.34)
Dimensions in inches and (millimeter)
Circuit Diagram
Maximum Rating and Electrical Characteristics
O
( at TA=25 C unless otherwise specified )
Parameter
Maximum working Peak Reverse Voltage
Maximum diode breakdown voltage
Maximum reverse leakage current
Capacitance
ESD capability
Clamping Voltage
Peak Pulse Power
Total power dissipation
Junction temperature
Storage temperature
Conditions
IR = 1mA
VRwm = 5V
VR =0V,f =1MHz
IEC 61000-4-2(air)
IEC 61000-4-2(Contact)
IPP = 1 A, tp=8/20us
TP=8/20us
FR-5 board @ TA=25°C
Symbol _Min Typ _{Max Unit}
VRWM
5.0
V
VBR
IR
C
ESD
ESD
Vc
5.4
V
1.0
µA
0.5 0.9
pF
15
kV
10
kV
9.8
V
PPP
PD
Tj
-55
9.8
W
150 mW
125 °C
TSTG
-55
150 °C
NOTES:
1. FR-5=1.0*0.75*0.62in.
.
2. Surge current waveform per Figure1.
3. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
Company reserves the right to improve product design , functions and reliability without notice.
QW-JP033
Comchip Technology CO., LTD.
REV: A
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