CPDQ5V0U1-HF Datasheet, PDF (1/5 Pages) Comchip Technology – SMD ESD Protection Diode

SMD ESD Protection Diode
CPDQ5V0U1-HF
RoHS Device
Features
- IEC61000-4-2 Level 4 ESD Protection.
- ESD Rating of Class 3 (>16kV) per Human Body Mode.
- Low bodym height: 0.017” (0.43mm) Max
- Low Leakage.
Mechanical data
- Case: 0402/SOD-923F small outline plastic package.
molded plastic.
- Terminals: Matte tin plated, solderable per
MIL-STD-750,method 2026.
- Mounting position: Any.
- High temperature soldering guaranteed: 260°C/10 second.
- Weight: 0.001 gram(approx.).
Circuit Diagram
0402/SOD-923F
0.041(1.05)
0.037(0.95)
0.033(0.85)
0.030(0.75)
0.026(0.65)
0.022(0.55)
0.007(0.17)
0.003(0.07)
0.010(0.25)
0.006(0.15)
0.006(0.15)
0.002(0.05)
0.016(0.40)
0.014(0.36)
Dimensions in inches and (millimeter)
Maximum Rating and Electrical Characteristics
O
(at TA=25 C unless otherwise specified, VF=0.9V Max. @ IF=10mA for all types )
Parameter
Conditions
Working Peak Reverse Voltage
Breakdown voltage
IR = 1mA
Maximum reverse leakage current
VR = 5V
Junction capacitance
VR =0V,f =1MHz
ESD capability
Clamping Voltage
IEC 61000-4-2(air)
IEC 61000-4-2(Contact)
IPP = 8.7 A, tp=8/20us
Peak Pulse Power
TP=8/20us
Junction temperature range
Storage temperature range
NOTES:
1. FR-5= 1.0*0.75*0.62 in.
2. Surge current waveform per Figure 3.
3. VBR is measured with a pulse test current IT at an ambient tem.perature of 25°C.
Symbol _Min Typ _{Max Unit}
VRWM
5.0
V
VBR
IR
CT
ESD
ESD
Vc
6.2
V
1.0
µA
65
pF
15
kV
8
kV
12.3
V
PD
Tj
TSTG
107
W
-55
150 °C
-55
150 °C
Company reserves the right to improve product design , functions and reliability without notice.
QW-JP029
Comchip Technology CO., LTD.
REV:B
Page 1