CPDQ3V3U-HF Datasheet, PDF (1/6 Pages) Comchip Technology – SMD ESD Protection Diode

SMD ESD Protection Diode
CPDQ3V3U-HF
RoHS Device
Halogen Free
Features
- IEC61000-4-2 Level 4 ESD protection.
- ESD Rating of Class 3(>16kV) per Human Body Mode.
- Low body height: 0.017”(0.43mm)
- Low Leakage
Mechanical data
- Epoxy: Meets UL 94V-0
- Case: 0402/SOD-923F small outline plastic package.
molded plastic.
- Terminals: Matte tin plated, solderable per
MIL-STD-750, method 2026.
- Mounting position: Any.
- High temperature soldering guaranteed: 260°C/10 second.
- Weight: 0.001mgram(approx.).
Circuit Diagram
0402/SOD-923F
0.041(1.05)
0.037(0.95)
0.033(0.85)
0.030(0.75)
0.026(0.65)
0.022(0.55)
0.007(0.17)
0.003(0.07)
0.010(0.25)
0.006(0.15)
0.006(0.15)
0.002(0.05)
0.016(0.40)
0.013(0.34)
Dimensions in inches and (millimeter)
Maximum Rating and Electrical Characteristics
O
(at TA=25 C unless otherwise specified. VF=0.9V at IF=10mA for all types)
Parameter
Maximum working Peak Reverse Voltage
Maximum diode breakdown voltage
Maximum reverse leakage current
Junction capacitance
ESD capability
Clamping Voltage
Peak Pulse Power
Junction temperature
Storage temperature
Conditions
IR = 1mA
VR = 3.3V
VR =0V,f =1MHz
IEC 61000-4-2(air)
IEC 61000-4-2(Contact)
IPP = 9.8A, tp=8/20us
TP=8/20us
Symbol _Min Typ _{Max Unit}
VRWM
3.3
V
VBR
IR
CT
ESD
ESD
Vc
PPP
Tj
TSTG
5.0
V
2.5
µA
80
pF
15
kV
8
kV
10.4
V
102
W
-55
150
°C
-55
150 °C
NOTES:
.1. _{FR-5=1.0*0.75*0.62in.}
2. Surge current waveform per Figure3.
3. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
Company reserves the right to improve product design , functions and reliability without notice.
QW-JPXXX
Comchip Technology CO., LTD.
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