CPDQ3V3-HF Datasheet, PDF (1/6 Pages) Comchip Technology – IEC61000-4-2 Level 4 ESD protection.

SMD ESD Protection Diode
CPDQ3V3-HF
RoHS Device
Halogen Free
Features
- IEC61000-4-2 Level 4 ESD protection.
- ESD Rating of Class 3 per Human Body Mode.
- Peak Power up to 150 Watts @ 8x20µs Pulse.
- Low Leakage current.
- Response Time is Typically <1ns
- Working Voltage: 3.3V
Mechanical data
- Case: 0402/SOD-923F small outline plastic package.
- Terminals: Matte tin plated, solderable per
MIL-STD-750, method 2026.
- Mounting position: Any.
- High temperature soldering guaranteed: 260°C/10 second.
- Weight: 0.001 gram(approx.).
Circuit Diagram
0402/SOD-923F
0.041(1.05)
0.037(0.95)
0.033(0.85)
0.030(0.75)
0.026(0.65)
0.022(0.55)
0.007(0.17)
0.003(0.07)
0.010(0.25)
0.006(0.15)
0.006(0.15)
0.002(0.05)
0.016(0.40)
0.013(0.34)
Dimensions in inches and (millimeter)
Maximum Rating and Electrical Characteristics
O
(at TA=25 C unless otherwise specified )
Parameter
Maximum working Peak Reverse Voltage
Maximum diode breakdown voltage
Maximum reverse leakage current
Junction capacitance
ESD capability
Clamping Voltage
Peak Pulse Power
Junction temperature
Operation temperature
Storage temperature
Conditions
IR = 1mA
VR = 3.3V
VR =0V,f =1MHz
IEC 61000-4-2(air)
IEC 61000-4-2(Contact)
IPP = 5 A, tp=8/20us
IPP = 11.2 A, tp=8/20us
TP=8/20us
NOTES:
1. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
.
Symbol _Min Typ _{Max Unit}
VRWM
3.3
V
VBR
IR
CT
ESD
ESD
Vc
Vc
PPP
5.0
V
1
µA
25
pF
15
kV
8
kV
8.4
V
14.1 V
158
W
Tj
TOP
-40
150 °C
125 °C
TSTG
-55
155 °C
Company reserves the right to improve product design , functions and reliability without notice.
QW-JPXXX
Comchip Technology CO., LTD.
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