CPDH3V3UP Datasheet, PDF (1/4 Pages) Comchip Technology – SMD ESD Protection Diode

SMD ESD Protection Diode
CPDH3V3UP
RoHS Device
Features
IEC61000-4-2 (ESD)±15kV(Contact),±20kV(Air).
Working voltage: 3.3V
Low leakage current.
Low operating and clamping voltages.
Mechanical data
Case: SOD-523 standard package ,molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Mounting position: Any
Weight: 0.0012 gram(approx.).
Circuit Diagram
SMD Diodes Specialist
0.014(0.35)
0.010(0.25)
SOD-523
0.051(1.30)
0.043(1.10)
0.067(1.70)
0.059(1.50)
0.033(0.85)
0.030(0.75)
0.031(0.77)
0.020(0.51)
0.003(0.07)
0.001(0.01)
0.006(0.15)
0.003(0.08)
0.008(0.20)
REF
Dimensions in inches and (millimeter)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Peak pulse power ( tp = 8/20 us)
Peak pulse current ( tp = 8/20 us)
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
Operating temperature
Storage temperature
Symbol
PPP
IPP
VESD
Tj
TSTG
Value
40
5
±20
±15
-55 to +125
-55 to +125
Unit
W
A
kV
O
C
O
C
Electrical
Characteristics
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Reverse stand-off voltage
Punch-through voltage
Snap-back voltage
Reverse leakage current
Clamping voltage
Reverse clamping voltage
Junction capacitance
Conditions
IPT = 2uA
ISB = 50mA
VRWM = 3.3V
IPP = 1 A, tp=8/20us
IPP = 5 A, tp=8/20us
IPPR = 1 A, tp=8/20us
VR = 0 V, f = 1MHz
Symbol _Min Typ _{Max Unit}
VRWM
3.3
V
VPT
3.5
V
VSB
2.8
V
IR
0.05 0.5 uA
VC
5.5
V
VC
8.0
V
VCR
2.4
V
Cj
12 16
pF
QW-BP022
Comchip Technology CO., LTD.
REV:C
Page 1