CJS8810-HF Datasheet, PDF (1/5 Pages) Comchip Technology – MOSFET

MOSFET
CJS8810-HF
N-Channel
RoHS Device
Halogen Free
Features
- Uses advanced trench technology.
- Excellent RDS(ON) and low gate charge.
Mechanical data
- Case: TSSOP8, molded plastic.
Circuit diagram
D1/D2 S2 S2 G2
8 765
1
4
TSSOP8
0.122(3.10)
0.114(2.90)
8
5
0.047(1.20)
MAX.
8765
0.258(6.55)
0.246(6.25)
0.177(4.50)
0.169(4.30)
1234
1 234
D1/D2 S1 S1 G1
V(BR)DSS
RDS(on) MAX
ID
20mΩ@10V
22mΩ@4.5V
20V
24mΩ@3.8V
7A
26mΩ@2.5V
35mΩ@1.8V
0.012(0.30)
0.007(0.19)
0.026(0.65)
BSC.
0.008(0.20)
0.004(0.09)
0.028(0.70)
0.020(0.50)
Dimensions in inches and (millimeter)
Maximum Ratings (at Ta=25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-source voltage
Gate-source voltage
VDS
20
V
VGS
±12
V
Continuous drain current
Pulsed drain current (Note 1)
Total power dissipation (Note 2)
ID
7
A
IDM
30
A
PD
0.7
W
Thermal resistance from junction to ambient
RθJA
125
°C/W
Junction temperature range
TJ
150
°C
Storage temperature range
TSTG
-55 to +150
°C
Lead temperature for soldering purposes(1/8’’ from case for 10s) TL
260
°C
Note: 1. Repetitive rating：Pulse width limited by junction temperature.
Note: 2. Device mounted on FR4 substrate pcb board 2 oz copper with minimum recommended pad layout.
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR15
Comchip Technology CO., LTD.
REV: A
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