CJM1206-G Datasheet, PDF (1/5 Pages) Comchip Technology – MOSFET

MOSFET
CJM1206-G (P-Channel )
RoHS Device
Comchip
SMD Diode Specialist
V(BR)DSS
RDS(on)MAX
ID
45mΩ @ -4.5V
-12V
60mΩ @ -2.5V
-6A
90mΩ @ -1.8V
Features
- P-Channel -12V(D-S) power MOSFET
- Advanced trench MOSFET process technology
- Ultra low on-resistance with low gate charge
DFNWB2*2-6L-J
0.082(2.076)
0.076(1.924)
Mechanical data
- Case: DFNEB2*2-6L-J, molded plastic.
0.082(2.076)
0.076(1.924)
0.002(0.05)
0.000(0.00)
0.026(0.65)TYP.
Circuit diagram
- 1. DRAIN
- 2. DRAIN
- 3. GATE
D¹
- 4. SOURCE
- 5. DRAIN
- 6. DRAIN
D²
3
G
6
D
5
D
4_S
0.035(0.90)
0.028(0.70)
0.008(0.20)
REF.
0.008(0.20)
MIN.
45
0.013(0.326)
0.007(0.174)
6
0.026(0.66)
S
0.018(0.46)
0.008(0.40)
0.016(0.20)
3
D
21
0.041(1.05)
0.033(0.85)
0.039(1.00)
0.031(0.80)
0.014(0.35)
0.010(0.25)
Dimensions in inches and (millimeter)
Maximum Ratings (at Ta=25 °C unless otherwise noted)
Parameter
Symbol
Value
Drain-source voltage
VDS
-12
Gate-source voltage
VGS
±8
Drain current-continuous
ID
-6
Drain current-pulsed
IDM*
-20
Power dissipation
PD
2.5
Thermal resistance from junction to ambient
RΘJA
357
Junction temperature range
TJ
-40 to +150
Storage temperature range
TSTG
* Repetitive rating: Pluse width limited by junction temperature
-55 to +150
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR46
Comchip Technology CO., LTD.
Unit
V
A
W
°C/W
°C
°C
REV:A
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