CJA03N10-HF Datasheet, PDF (1/4 Pages) Comchip Technology – MOSFET

MOSFET
CJA03N10-HF
N-Channel
RoHS Device
Halogen Free
Features
-Special process technology for high ESD capability.
-High density cell design for extremely low RDS(ON).
-Good stability and uniformity with high EAS.
-Excellent package for good heat dissipation.
Circuit Diagram
D
G
S
1 : Gate
2 : Drain
3 : Source
SOT-89-3L
0.181(4.60)
0.173(4.40)
0.061(1.55)
REF.
0.102(2.60)
0.091(2.30)
123
0.167(4.25)
0.155(3.94)
0.020(0.52)
0.013(0.32)
0.060(1.50)
TYP.
0.023(0.58)
0.016(0.40)
0.118(3.00)
TYP.
0.063(1.60)
0.055(1.40)
0.047(1.20)
0.035(0.90)
0.017(0.44)
0.014(0.35)
Dimensions in inches and (millimeter)
Maximum Ratings (at Ta=25°C unless otherwise noted)
Parameter
Symbol
Drain-source voltage
VDS
Gate-source voltage
VGS
Continuous drain current
ID
Pulsed drain current (Note 1)
IDM
Power dissipation
PD
Thermal resistance from Junction to ambient (Note 2)
RΘJA
Junction temperature
TJ
Storage temperature
TSTG
Note:
1. Repetitive rating : Pulse width limited by junction temperature.
2. Surface mounted on FR4 board , t≤10s.
Value
100
±20
3
20
0.5
250
150
-55 to +150
Units
V
V
A
A
W
°C/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR11
Comchip Technology CO., LTD.
REV:A
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