CJ3139KDW-G Datasheet, PDF (1/5 Pages) Comchip Technology – MOSFET

MOSFET
CJ3139KDW-G (Dual P-Channel )
RoHS Device
Comchip
SMD Diode Specialist
V(BR)DSS
RDS(on)MAX
520mΩ @ -4.5V
-20V
700mΩ @ -2.5V
950mΩ(TYP) @ -1.8V
ID
-0.66A
Features
- High-side switching
- Low on-resistance
- Low threshold
- Fast switching speed
Mechanical data
- Case: SOT-363, molded plastic.
- Terminals: Solderable per MIL-STD-750,
method 2026.
- Weight: 0.006 grams (approx.)
SOT-363
0.053(1.35)
0.045(1.15)
0.045(1.15)
0.041(1.05)
0.087(2.20)
0.079(2.00)
6
5
4
1
2
3
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.096(2.45)
0.085(2.15)
0.014(0.35)
0.006(0.15)
0.004(0.10)
0.000(0.00)
0.018(0.46)
0.010(0.26)
Dimensions in inches and (millimeter)
Circuit diagram
G : Gate
S : Source
D : Drain
D1
G2
S2
6
5
4
Maximum Ratings (at Ta=25 °C unless otherwise noted)
Parameter
Symbol
Drain-source voltage
VDSS
Typ. Gate-source voltage
VGS
Drain current-Continuous
ID(DC)
Drain current-pulsed (note1)
IDM(pulse)
Power dissipation (note 2)
PD
Thermal resistance from junction to ambient
RΘJA
Junction temperature range
TJ
Storage temperature range
TSTG
1
2
3
S1
G1
D2
Value
-20
±12
-0.66
-2.64
150
833
-40 to +150
-55 to +150
Unit
V
V
A
A
mW
°C/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR52
Comchip Technology CO., LTD.
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