CJ2324-G Datasheet, PDF (1/5 Pages) Comchip Technology – N-Channel MOSFET

MOSFET
CJ2324-G (N-Channel MOSFET )
RoHS Device
Comchip
SMD Diode Specialist
V(BR)DSS
RDS(on)MAX
ID
234mΩ @ 10V
100V
267mΩ @ 6V
2A
278mΩ @ 4.5V
Features
- TrenchFET Power MOSFET
- Low RDS(ON).
- Surface mount package.
Mechanical data
- Case: SOT-23, molded plastic.
Circuit diagram
SOT-23
0.055(1.40)
0.047(1.20)
0.118(3.00)
0.110(2.80)
3
1
2
0.079(2.00)
0.071(1.80)
0.041(1.05)
0.035(0.90)
0.007(0.150)
0.002(0.080)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
3
D
Dimensions in inches and (millimeter)
1
G
S
2
1. GATE
2. SOURCE
3. DRAIN
Absolute Maximum Ratings (at Ta=25 °C unless otherwise noted)
Parameter
Symbol
Drain-source voltage
VDS
Gate-source voltage
VGS
Continuous drain current
ID
Pulsed drain current
IDM*
Power dissipation
Thermal resistance from junction to ambient
PD
RΘJA
Junction temperature
TJ
Storage temperature
TSTG
Lead temperature for soldering purposes(1/8” form case for 10 s)
TL
* Repetitive rating: Pulse width limited by junction temperature.
Value
100
±20
2
8
350
357
-40 to +150
-55 to +150
260
Unit
V
V
A
A
mW
°C/W
°C
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR45
Comchip Technology CO., LTD.
REV:A
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