CJ2101-G Datasheet, PDF (1/5 Pages) Comchip Technology – MOSFET

MOSFET
CJ2101-G
RoHS Device
V(BR)DSS
-20V
RDS(on)MAX
100mΩ @ -4.5V
140mΩ @ -2.5V
210mΩ @ -1.8V
ID
-1.4A
Features
- P-Channel MOSFET
- Leading trench technology for low RDS(on)
extending battery life
Mechanical data
- Case: SOT-323, molded plastic.
- Terminals: Solderable per MIL-STD-750,
method 2026.
- Weight: 0.008 grams(approx.).
Comchip
SMD Diode Specialist
SOT-323
0.053(1.35)
0.045(1.15)
0.043(1.10)
0.035(0.90)
0.087(2.20)
0.079(2.00)
D
G
S
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.096(2.45)
0.085(2.15)
0.016(0.40)
0.008(0.20)
0.004(0.10)
0.000(0.00)
0.017(0.425)REF.
Dimensions in inches and (millimeter)
Circuit diagram
- 1. GATE
- 2. SOURCE
3
D
- 3. DRAIN
1
G
Maximum Ratings (at Ta=25 °C unless otherwise noted)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current (tp=10µs)
Power dissipation
Thermal resistance from junction to ambient
Junction temperature range
Storage temperature range
VDS
VGS
ID
IDM
PD
RΘJA
TJ
TSTG
Value
-20
±8
-1.4
-3.0
0.29
431
150
-50 ~ +150
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR37
Comchip Technology CO., LTD.
S
2
Unit
V
V
A
W
°C/W
°C
°C
REV:A
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