CJ1012-G Datasheet, PDF (1/5 Pages) Comchip Technology – MOSFET

MOSFET
CJ1012-G
N-Channel
RoHS Device
Features
- High-Side Switching.
- Low On-Resistance.
- Low Threshold.
- Fast Switching Speed.
- ESD protected up to 2KV.
Mechanical data
- Case: SOT-323, molded plastic.
- Terminals: Solderable per MIL-STD-750,
method 2026.
Circuit Diagram
G1
S2
3D
G : Gate
S : Source
D : Drain
SOT-523
0.067(1.70)
0.059(1.50)
3
0.035(0.90)
0.028(0.70)
1
2
0.020(0.50)TYP.
0.043(1.10)
0.035(0.90)
0.014(0.35)
0.010(0.25)
0.008(0.20)
0.004(0.10)
0.069(1.75)
0.057(1.45)
0.018(0.46)
0.010(0.26)
0.031(0.80)
0.028(0.70)
0.010(0.25)
0.006(0.15)
0.004(0.10) max
Dimensions in inches and (millimeter)
Maximum Rating (at Ta=25°C unless otherwise noted)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
VDSS
VGS
Drain current-continuous
ID(DC)
Drain Current-pulsed (note1)
IDM(pulse)
Power dissipation (note2, TA=25°C)
PD
Max. Power dissipation (note3, TC=25°C)
Thermal resistance from junction to ambient
RθJA
Thermal resistance from junction to case
Junction temperature
Storage temperature
RθJC
TJ
TSTG
Value
20
±12
500
1000
150
275
833
455
150
-55 to +150
Unit
V
V
mA
mA
mW
°C/W
°C/W
°C
°C
QW-BTR44
Company reserves the right to improve product design , functions and reliability without notice.
Comchip Technology CO., LTD.
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