CEFN103-HF Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Efficient Fast Recovery Rectifiers

SMD Efficient Fast Recovery Rectifiers
CEFN103-HF
Forward current: 1.0A
Reverse voltage: 600V
RoHS Device
Halogen Free
Features
-GPRC(Glass passivated rectifier chip) inside.
-Glass passivated cavity-free junction.
-Low power loss, High efficiency.
-High current capability
-Plastic package has underwriters laboratory
flammability classification 94V-0.
Mechanical Data
-Case: Packed with FRP substrate and
epoxy underfilled.
-Terminals: Pure Tin plated (Lead-Free),solderable
per MIL-STD-750, method 2026.
-Polarity: Laser cathode band marking.
.-Weight: 0.012 gram (approx).
1206
0.083 (2.10)
0.067 (1.70)
0.142 (3.60)
0.126 (3.20)
R 0.016 (0.40)
0.063(1.60)
Typ.
0.035 (0.90)
0.020 (0.50)
0.046 (1.16)
0.034 (0.86)
0.035 (0.90)
0.020 (0.50)
Dimensions in inches and (millimeter)
Circuit diagram
Absolute Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Marking
Repetitive peak reverse voltage
VRRM
Average forward current
TL=110°C
IF(AV)
Peak forward surge current
8.3ms single half sine-wave IFSM
Reverse recovery time
IF=0.5A,IR=1.0A,Irr=0.25A
Trr
Operating junction temperature
TJ
Storage temperature
TSTG
CEFN103-HF
167
.Z.
600
1.0
25
35
-65 to +175
-65 to +175
Units
V
A
A
nS
°C
°C
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Forward voltage
IF =0.1A
IF =0.5A
IF =1.0A
Conditions
Symbol
VF
Repetitive peak reverse current VR =Max. VRRM, TA=25°C
IRRM
MIN.
-
-
-
-
TYP.
0.80
1.15
1.40
0.20
MAX. Unit
-
-
V
1.70
5
uA
Junction capacitance
VR =4V, f=1.0MHZ
CJ
-
10
-
pF
Thermal Resistance
Junction to ambient (Note)
Junction to lead (Note)
RθJA
-
80
-
°C/W
RθJL
-
40
-
Notes: 1. Thermal resistance from junction to ambient and from junction to lead P.C.B. monuted on 0.2×0.2”(5.0*5.0mm) copper pad areas.
Company reserves the right to improve product design , functions and reliability without notice. REV:A
QW-JE001
Comchip Technology CO., LTD.
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