CDSW4148-G_12 Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Switching Diode

SMD Switching Diode
CDSW4148-G
High Speed
RoHS Device
Features
-Fast Switching Speed
-Electrically Identical to Standard JEDEC
-High Conductance
-Surface Mount Package Ideally Suited for
Automatic Insertion
-Flat Package SOD-123 in Stead mini-MELF
Package
Mechanical data
-Case: SOD-123, Molded Plastic
-Terminals: Solderable per MIL-STD-202, Method 208
-Weight: 0.0097 gram(approx.).
SOD-123
0.026 (0.65)
0.018 (0.45)
0.110 (2.80)
0.102 (2.60)
0.152 (3.85)
0.140 (3.55)
0.045 (1.15)
0.041 (1.05)
0.004 (0.10)max
0.067 (1.70)
0.059 (1.50)
0.006 (0.15)
0.003 (0.08)
0.020 (0.50)REF
Dimensions in inches and (millimeters)
Maximum Rating (at Ta=25°C unless otherwise noted)
Parameter
Non-Repetitive peak reverse voltage
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Forward continuous current
Average rectified output current
Peak forward surge current
Power dissipation
Conditions
TP = 1uS
TP = 1S
Thermal Resistance (Junction to ambient)
Storage temperature
Junction temperature
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
Io
IFSM
PD
R JA
TSTG
Tj
Min
-65
-65
Max
100
75
53
300
150
2
1
400
315
+150
+150
Unit
V
V
V
mA
mA
A
mW
°C/W
°C
°C
Electrical Characteristics (at Ta=25°C unless otherwise noted)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
QW-B0017
Conditions
Symbol _Min Typ _{Max Unit}
IF = 1 mA DC
IF = 10mA DC
IF = 50mA DC
IF =150mA DC
VR = 20 V
VR = 75 V
f = 1 MHZ and VR=0V DC
0.715
0.855
VF
V
1.0
1.25
25
nA
IR
1
µA
CJ
2
PF
IF = IR = 10 mA, RL =100 ohms, Irr = 0.1 X IR
TRR
4
nS
Comchip Technology CO., LTD.
REV:D
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