CDSW19-G_12 Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Switching Diode

SMD Switching Diode
CDSW19-G/20-G/21-G
High Speed
RoHS Device
Features
-Fast Switching Speed
-Surface Mount Package Ideally Suited for
Automatic Insertion
-For General Purpose Switching Applications
Mechanical data
-Case: SOD-123, Molded Plastic
-Terminals: Solderable per MIL-STD-202, Method
208
-Weight: 0.01 gram(approx.).
SOD-123
0.028 (0.70)
0.019 (0.50)
0.110 (2.80)
0.098 (2.50)
0.154 (3.90)
0.141 (3.60)
0.071 (1.80)
0.055 (1.40)
0.053 (1.35)
0.037 (0.95)
0.005 (0.12)max
0.008 (0.20)max
0.016 (0.40)min
Maximum Rating (at Ta=25°C unless otherwise noted)
Parameter
Non-Repetitive peak reverse voltage
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Forward continuous current
Average rectified output current
Peak forward surge current
Repetitive peak forward current
@1.0mS
@1.0S
Power dissipation
Thermal Resistance (Junction to ambient)
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
Io
IFSM
IFRM
PD
R JA
Storage temperature
TSTG
Dimensions in inches and (millimeters)
CDSW19-G
120
CDSW20-G
200
CDSW21-G
250
100
150
200
71
106
141
400
200
2.5
0.5
625
250
500
-65 ~ +150
Unit
V
V
V
mA
mA
A
mA
mW
O
C/W
O
C
Electrical Characteristics (at Ta=25°C unless otherwise noted)
Parameter
Forward voltage
IF = 0.1 A
IF = 0.2 A
Reverse current
CDSW19-G VR=100 V
CDSW20-G VR=150 V
CDSW21-G VR=200 V
Conditions
Capacitance between terminals
f = 1 MHZ, VR=0V
Reverse recovery time
IF = IR=30 mA, RL =100 Ω, Irr = 0.1 X IR
Symbol
VF
IR
Min ^Typ
Max Unit
1.0
V
1.25
0.1
0.1 uA
0.1
CT
5
PF
tRR
50
nS
QW-B0018
REV:A
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