CDSV6-99BR-G Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Switching Diode Arrays

SMD Switching Diode Arrays
CDSV6-99BR-G
Forward Current: 0.15A
Reverse Voltage: 75V
RoHS Device
COMCHIP
SMD Diodes Specialist
Features
-Fast switching speed.
-Ultra small surface mount package.
-For general purpose swicthing applications.
-High conductance.
Marking: KGJ
Diagram:
AC C1 C2
1
SOT-363
0.087(2.20)
0.071(1.80)
0.053(1.35)
0.045(1.15)
0.044(1.10)
0.035(0.90)
0.056(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.096(2.45)
0.085(2.15)
0.014(0.35)
0.006(0.15)
0.004(0.10)max
0.010(0.25)min
A1
A2
AC
2
Dimensions in inches and (millimeters)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward continuous current
Averaged rectified output current
Non-repetitive peak forward surge current @t=1.0μS
@t=1.0S
Power dissipation
Thermal resistance, junction to ambient air
Operation junction temperature
Storage temperature range
Symbol
VRRM
VRWM
VR
IFM
IO
IFSM
PD
RθJA
TJ
TSTG
Limits
75
300
150
2.0
1.0
200
625
150
-65 ~ +150
Unit
V
mA
mA
A
mW
O_C/W
O_C
O_C
Electrical
Characteristics
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Symbol _Min Typ _{Max Unit}
Reverse breakdown voltage
IR=2.5μA
V(BR)R
75
V
Forward voltage
IF=1mA
IF=10mA
IF=50mA
IF=150mA
0.715
0.855
VF
1.000 ^V
1.250
Reverse leakage current
VR=75V
VR=20V
IR
2.5
μA
0.025
Junction capacitance
VR=0V, f=1.0MHz
CT
2
pF
Reverse recovery time
IF=IR=10mA, Irr=0.1×IR, RL=100Ω
trr
4
nS
QW-B0037
REV:A
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