CDSV6-4448D-G_12 Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Switching Diode

SMD Switching Diode
CDSV6-4448D-G
RoHS Device
Features
-Fast switching speed.
-Ultra-small surface mount package.
-For general purpose switching applications.
-High conductance power dissipation.
Mechanical data
-Case:SOT-363, molded plastic.
-Terminals: Solder plated, solderable per
MIL-STD-750,method 2026.
-Mounting position: Any.
-Weight: 0.0091 gram (approx.)
Marking: KA3
C1
NC
A2
K A3
A1
NC
C2
SOT-363
0.053(1.35)
0.045(1.15)
0.087(2.20)
0.079(2.00)
0.039(1.00)
0.035(0.90)
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.096(2.45)
0.085(2.15)
0.014(0.35)
0.006(0.15)
0.004(0.10)max
0.010(0.26)
Dimensions in inches and (millimeter)
Maximum Ratings (at Ta=25°C unless otherwise noted)
Parameter
Non-repetitive peak reverse voltage
Peak repetitive reverse voltage
Working peak reverse voltage
DC Blocking voltage
RMS Reverse voltage
Forward continuous current
Average rectified output current
Non-repetitive peak forward surge current
Power dissipation
@ t < 1us
@ t < 1s
Thermal resistance junction to ambient air
Operating and storage temperature range
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
Pd
RθJA
Tj, TSTG
Electrical Characteristics (at Ta=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Reverse breakdown voltage
Forward voltage
Reverse current
Diode junction Capacitance
Reverse recovery time
IR = 10uA
VBR
IF = 50mA
IF = 10mA
IF = 50mA
VF
IF = 150mA
VR = 75V
VR = 75V, TJ = 150°C
VR = 25V, TJ = 150°C
IR
VR = 20V
VR = 0, f = 1.0MHz
CJ
IF = IR = 10mA
Irr = 0.1 X IR,RL = 100Ω
Trr
QW-B0044
Comchip Technology CO., LTD.
Value
100
75
53
500
250
4
2
200
625
-65 to +150
Min
75
0.62
Typ
Unit
V
V
V
mA
mA
A
mW
°C/W
°C
Max
0.720
0.855
1.0
1.25
2.5
50
30
25
4.0
4.0
Unit
V
V
uA
uA
uA
nA
pF
nS
REV:B
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