CDSV6-16-G_12 Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Switching Diode Arrays

SMD Switching Diode Arrays
CDSV6-16-G/4148-G
Forward Current: 0.15A
Reverse Voltage: 75V
RoHS Device
Features
-Fast switching speed.
-For general purpose swicthing applications.
-High conductance.
Marking: KA2
Diagram:
C1
C2
C3
A1
A2
A3
SOT-363
0.087(2.20)
0.071(1.80)
0.053(1.35)
0.045(1.15)
0.044(1.10)
0.035(0.90)
0.056(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.096(2.45)
0.085(2.15)
0.014(0.35)
0.006(0.15)
0.004(0.10)max
0.010(0.25)min
Dimensions in inches and (millimeters)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol
Non-repetitive peak reverse voltage
VRM
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VR
RMS reverse voltage
VR(RMS)
Forward continuous current
IFM
Averaged rectified output current
IO
Peak forward surge current
@t=1.0μS
IFSM
@t=1.0S
Power dissipation
PD
Thermal resistance, junction to ambient air
RθJA
Operation and storage temperature range
TJ, TSTG
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Reverse breakdown voltage
Forward voltage
Reverse leakage current
Capacitance between terminals
Reverse recovery time
Conditions
IR=1μA
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=20V
VR=75V
VR=0V, f=1.0MHz
IF=IR=10mA to Irr=0.1×IR, RL=100Ω
QW-B0032
Limits
100
75
53
300
150
2.0
1.0
200
625
-65 ~ +150
Unit
V
V
V
mA
mA
A
mW
O_C/W
O_C
Symbol _Min Typ _{Max Unit}
V(BR)R
75
V
VF1
0.715
VF2
0.855
VF3
1.0
V
VF4
1.25
IR1
25
nA
IR2
1
μA
CT
2
pF
trr
4
nS
REV:A
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