CDSV6-16-G Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Switching Diode Arrays

SMD Switching Diode Arrays
CDSV6-16-G/4148-G
Forward Current: 0.15A
Reverse Voltage: 75V
RoHS Device
COMCHIP
SMD Diodes Specialist
Features
SOT-363
-Fast switching speed.
-For general purpose swicthing applications.
-High conductance.
Marking: KA2
Diagram:
C1
C2
C3
0.053(1.35)
0.045(1.15)
0.044(1.10)
0.035(0.90)
0.087(2.20)
0.071(1.80)
0.056(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.096(2.45)
0.085(2.15)
0.014(0.35)
0.006(0.15)
0.004(0.10)max
0.010(0.25)min
A1
A2
A3
Dimensions in inches and (millimeters)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Symbol
Limits
Unit
Non-repetitive peak reverse voltage
VRM
100
V
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
75
V
VR
RMS reverse voltage
VR(RMS)
53
V
Forward continuous current
IFM
300
mA
Averaged rectified output current
IO
150
mA
Peak forward surge current
@t=1.0μS
2.0
IFSM
A
@t=1.0S
1.0
Power dissipation
PD
200
mW
Thermal resistance, junction to ambient air
Operation and storage temperature range
RθJA
TJ, TSTG
625
-65 ~ +150
O_C/W
O_C
Electrical
Characteristics
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Symbol _Min Typ _{Max Unit}
Reverse breakdown voltage
Forward voltage
Reverse leakage current
Capacitance between terminals
Reverse recovery time
IR=1μA
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=20V
VR=75V
VR=0V, f=1.0MHz
IF=IR=10mA to Irr=0.1×IR, RL=100Ω
V(BR)R
75
VF1
VF2
VF3
VF4
IR1
IR2
CT
trr
V
0.715
0.855
1.0
V
1.25
25 nA
1
μA
2
pF
4
nS
QW-B0032
REV:A
Page 1