CDSV3-19-G_12 Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Switching Diode

SMD Switching Diode
CDSV3-19-G/20-G/21-G
High Speed
RoHS Device
Features
-Fast switching diode.
-Surface mount package ideally for automatic
insertion.
-For general purpose switching applications.
-High conductance.
Mechanical data
-Case: SOT-323
-Terminals: Solder plated, solderable per MIL-
STD-750, Method 2026.
-Marking: CDSV3-19-G KA8
CDSV3-20-G KT2
CDSV3-21-G KT3
Maximum Rating (at Ta=25°C unless otherwise noted)
Parameter
Power dissipation
Forward current
Reverse voltage
CDSV3-19-G
CDSV3-20-G
CDSV3-21-G
Junction and storage temperature
Symbol
PD
IF
VR
TJ , TSTG
SOT-323
0.087(2.20)
0.070(1.80)
3
0.054(1.35)
0.045(1.15)
1
2
0.056(1.40)
0.047(1.20)
0.006(0.15)
0.002(0.05)
0.044(1.10)
0.035(0.90)
0.087(2.20)
0.078(2.00)
0.016(0.40)
0.008(0.20)
0.004(0.10)max.
0.004(0.10)min.
Dimensions in inches and (millimeters)
Value
Unit
200
mW
200
mA
120
150
V
200
-55 ~ +150
O_C
Electrical Characteristics (at Ta=25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
CDSV3-19-G
100
Reverse breakdown voltage
CDSV3-20-G
V(BR)R
IR=100uA
150
CDSV3-21-G
200
Reverse leakage current
CDSV3-19-G
CDSV3-20-G
CDSV3-21-G
VR=100V
IR
VR=150V
VR=200V
Forward voltage
IF=100mA
VF
IF=200mA
Diode capacitance
CD
VR=0V, f=1MHZ
Reverse recovery time
trr
IF=IR=30mA, Irr=0.1XIR
QW-B0025
Max
0.1
1
1.25
5
50
Unit
V
UA
V
pF
nS
REV:A
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