CDSV16-G_12 Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Switching Diode

SMD Switching Diode
CDSV16-G
RoHS Device
Features
-Fast Switching Speed
-Electrically Identical to Standard JEDEC
-High Conductance
-Surface Mount Package Ideally Suited for
Automatic Insertion
-Flat Package SOD-123 in Stead mini-MELF
Package
SOD-323
0.014 (0.35)
0.010 (0.25)
0.071 (1.80)
0.063 (1.60)
0.106 (2.70)
0.098 (2.50)
0.055 (1.40)
0.047 (1.20)
Mechanical data
-Case: SOD-323, Molded Plastic
-Terminals: Solderable per MIL-STD-202, Method
208
-Weight: 0.01 gram(approx.)
Maximum Rating (at Ta=25°C unless otherwise noted)
Parameter
Non-Repetitive peak reverse voltage
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Forward continuous current
Average rectified output current
Peak forward surge current
Power dissipation
Conditions
TP = 1uS
TP = 1S
Thermal Resistance (Junction to ambient)
Storage temperature
Junction temperature
0.039 (1.00)max
0.004 (0.10)max
0.006 (0.15)
0.003 (0.08)
0.019 (0.475)REF.
Dimensions in inches and (millimeters)
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
Io
IFSM
PD
R JA
TSTG
Tj
Min
-65
Max
100
75
53
300
150
2
1
200
625
+150
+125
Unit
V
V
V
mA
mA
A
mW
O
C/W
O
C
O
C
Electrical Characteristics (at Ta=25°C unless otherwise noted)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Conditions
IF = 1 mA DC
IF = 10mA DC
IF = 50mA DC
IF =150mA DC
VR = 20 V
VR = 75 V
f = 1 MHZ,and 0VDC reverse voltage
IF = IR=10 mA, RL =100 ohms, Irr = 0.1 X IR
Symbol _Min Typ _{Max Unit}
0.715 V
VF
0.855
1.0
1.25
IR
25
nA
1
uA
CT
2
PF
TRR
4
nS
QW-B0027
REV:A
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