CDST7000-G Datasheet, PDF (1/2 Pages) Comchip Technology – Surface Mount Switching Diode

Surface Mount Switching Diode
CDST7000-G
Voltage: 100 Volts
Current: 200 mA
Features
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching Applications
High Conductance
.119 (3.0)
.110 (2.8)
.020 (0.5)
3
SOT-23
Top View
Mechanical data
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750,
Method 208
Approx. Weight: 0.008 gram
1
2
.037(0.95) .037(0.95)
1
ANODE
3
CATHODE/ANODE
2
CATHODE
.020 (0.5) .020 (0.5)
.103 (2.6)
.086 (2.2)
Dimensions in inches (millimeters)
Maximum Ratings
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Rating
Thermal Characteristics
Characteristic
Total Device Dissipation FR– 5 Board(1)
Derate above 25°C
T_A = 25°C
Thermal Resistance, Junction t o Ambient
Total Device Dissipation Alumina S ubstrate,(2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction t o Ambient
Junction and Storage Temperature
Electrical Characterics (TA = 25°C unless otherwise noted)
Characteristic (OFF CHARACTERISTICS)
Reverse Breakdown Voltage ( I_(BR) = 100 uAdc )
Reverse Voltage Leakage Current
V_R = 50 Vdc
V_R = 100 Vdc
V_R = 50 Vdc, 125°C
Forward Voltage
I_F = 1.0 mAdc
I_F = 10 mAdc
I_F = 100 mAdc
Reverse Recovery Time (I_F = I_R = 10 mAdc) (Figure 1)
Diode Capacitance (V_R = 0)
1.FR–5 = 1.0 X 0.75X 0.062 in. 2.Alumina = 0.4X 0.3X 0.024 in. 99.5% alumina.
MDS0301004A
Symbol
V_R
I_F
I_{FM (surge)}
Value
100
200
500
Units
V_DC
mAdc
mAdc
Symbol
P_D
R_θJA
P_D
R_θJA
T_J, T_stg
Max
225
1.8
556
300
2.4
417
–55 to +150
Units
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V_(BR)
I_R
I_R2
I_R3
V_F
Trr
C
Min
100
-
-
-
0.55
0.67
0.75
-
Max
-
1
3
100
0.7
0.82
1.1
4.0
1.5
Units
Vdc
uAdc
Vdc
nS
pF
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