CDST226-G_12 Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Switching Diode

SMD Switching Diode
CDST226-G
RoHS Device
Features
-Power dissipation: 150mW (@TA=25 ^OC)
Mechanical data
-Case: SOT-23
-Terminals: Solder plated, solderable per MIL-
STD-750, Method 2026.
-Marking: C3
SOT-23
0.056 (1.40)
0.047 (1.20)
0.044 (1.10)
0.035 (0.90)
0.119 (3.00)
0.110 (2.80)
0.083 (2.10)
0.066 (1.70)
0.006 (0.15)
0.002 (0.05)
0.103 (2.60)
0.086 (2.20)
0.020 (0.50)
0.013 (0.35)
0.006 (0.15) max
0.007 (0.20) min
Dimensions in inches and (millimeters)
Maximum Rating (at Ta=25°C unless otherwise noted)
Parameter
Symbol
Non-Repetitive peak reverse voltage
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward continuous current
Average rectified output current
VRM
VRRM
VRWM
VR
IFM
IO
Peak forward surge current @10mS
IFSM
Power dissipation
PD
Storage temperature range
TSTG
Limits
85
80
300
100
2
150
-55 ~ +125
Electrical Characteristics (at Ta=25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Reverse breakdown voltage
VBR
IR=100μA
80
Reverse leakage current
IR
VR=80V
Forward voltage
Diode capacitance
VF
IF=100mA
CT
VR=0V, f=1MHz
Reverse recovery time
trr
Unit
V
V
mA
mA
A
mW
O_C
Max
Unit
V
0.5
μA
1.2
V
3
pF
4
nS
QW-B0024
REV:B
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