CDST193-G Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Switching Diode

SMD Switching Diode
CDST193-G
RoHS Device
COMCHIP
SMD Diodes Specialist
Features
-Low forward voltage: VF=0.9V (Typ.)
-Fast reverse recovery time: trr=1.6nS (Typ.)
Polarity: 1. ANODE
2. N.C.
3. CATHODE
0.056(1.40)
0.047(1.20)
0.044(1.10)
0.035(0.90)
SOT-23
0.119(3.00)
0.110(2.80)
3
1
2
0.083(2.10)
0.066(1.70)
0.006(0.15)
0.002(0.05)
0.103(2.60)
0.086(2.20)
Marking: F3
0.020(0.50)
0.013(0.35)
0.006(0.15) max
0.007(0.20) min
Dimensions in inches and (millimeter)
O
Maximum Ratings (at Ta=25 C unless otherwise noted)
Parameter
Symbol
Value
Unit
Non-repetitive peak reverse voltage
DC blocking voltage
Forward continuous current
Average rectified output current
Power dissipation
Junction temperature
Storage temperature
*Unit rating. Total rating=Unit rating × 1.5
VRM
VR
IFM
IO
PD
TJ
TSTG
85
V
80
V
300*
mA
100*
mA
150
mW
125
O_C
-55 ~ +125
O_C
O
Electrical Characteristics (at Ta=25 C unless otherwise noted)
Parameter
Conditions Symbol Min
Min
Reverse breakdown voltage
IR=100μA
V(BR)R
80
IF=1mA
VF1
Forward voltage
IF=10mA
VF2
IF=100mA
VF3
V
VR=30V
IR1
Reverse current
V
VR=80V
IR2
Capacitance between terminals
VR=0V, f=1MHz
CT
Reverse recovery time
IF=IR=10mA, Irr=0.1×IR
trr
V
0.60
0.72
0.90
0.90
1.60
Max
V
1.2
0.1
0.5
3.0
4.0
Unit
V
V
V
V
μA
μA
pF
nS
QW-B0028
REV:A
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