CDST116-G_12 Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Switching Diode

SMD Switching Diode
CDST116-G
RoHS Device
Features
-Low leakage current applications.
-Medium speed switching times.
Polarity:
0.056(1.40)
0.047(1.20)
0.044(1.10)
0.035(0.90)
SOT-23
0.119(3.00)
0.110(2.80)
3
1
2
0.083(2.10)
0.066(1.70)
0.006(0.15)
0.002(0.05)
0.103(2.60)
0.086(2.20)
Marking: JV
Maximum Ratings (at Ta=25°C unless otherwise noted)
Parameter
Symbol
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward continuous current
Power dissipation
Junction temperature
Storage temperature
VRRM
VRWM
VR
IFM
PD
TJ
TSTG
0.020(0.50)
0.013(0.35)
0.006(0.15) max
0.007(0.20) min
Dimensions in inches and (millimeter)
Value
t
75
215
250
150
-55 to +150
Unit
V
V
mA
mW
O_C
O_C
Electrical Characteristics (at Ta=25°C unless otherwise noted)
Parameter
Conditions
Symbol Min
Reverse breakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
IR=100μA
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=75V
VR=0V, f=1MHz
IF=IR=10mA, Irr=0.1×IR,
RL=100Ω
V(BR)R
75
VF1
VF2
VF3
VF4
IR
CT
trr
Typ.
V
2
Max
V
0.9
1
1.1
1.25
5
3
Unit
V
V
V
V
V
μA
pF
nS
QW-B0029
REV:A
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