CDST116-G Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Switching Diode

SMD Switching Diode
CDST116-G
RoHS Device
Features
-Low leakage current applications.
-Medium speed switching times.
Polarity:
COMCHIP
SMD Diodes Specialist
0.056(1.40)
0.047(1.20)
0.044(1.10)
0.035(0.90)
SOT-23
0.119(3.00)
0.110(2.80)
3
1
2
0.083(2.10)
0.066(1.70)
0.006(0.15)
0.002(0.05)
0.103(2.60)
0.086(2.20)
Marking: JV
0.020(0.50)
0.013(0.35)
0.006(0.15) max
0.007(0.20) min
Dimensions in inches and (millimeter)
O
Maximum Ratings (at Ta=25 C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward continuous current
Power dissipation
Junction temperature
Storage temperature
VRRM
VRWM
VR
IFM
PD
TJ
TSTG
t
V
75
V
215
mA
250
mW
150
O_C
-55 to +150
O_C
O
Electrical Characteristics (at Ta=25 C unless otherwise noted)
Parameter
Conditions Symbol Min
Typ.
Reverse breakdown voltage
IR=100μA
V(BR)R
75
V
IF=1mA
VF1
IF=10mA
VF2
Forward voltage
IF=50mA
VF3
IF=150mA
VF4
Reverse current
VR=75V
IR
Capacitance between terminals
VR=0V, f=1MHz
CT
2
Reverse recovery time
IF=IR=10mA, Irr=0.1×IR,
trr
RL=100Ω
Max
V
0.9
1
1.1
1.25
5
3
Unit
V
V
V
V
V
μA
pF
nS
QW-B0029
REV:A
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