CDST-2004S-G Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Switching Diode

SMD Switching Diode
CDST-2004S-G
(RoHS Device)
Features
- Design for mounting on small surface.
- High speed switching.
- High mounting capability, strong surge
withstand, high reliability.
Mechanical data
- Case: SOT-23
- Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026.
- Weight: 0.0078 grams (approx.).
Circuit Diagram
3
1
2
Maximum Rating (at TA=25°C unless otherwise noted)
Parameter
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Forward continuous current
Peak repetitive forward current
Peak forward surge current
@t=1.0us
@t=1.0s
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
IFRM
IFSM
Power dissipation
PD
Thermal resistance, junction to ambient
RθJA
Operating junction temperature
TJ , TSTG
0.056 (1.40)
0.047 (1.20)
0.041 (1.05)
0.035 (0.90)
SOT-23
0.119 (3.00)
0.110 (2.80)
3
1
2
0.079 (2.00)
0.071 (1.80)
0.006 (0.15)
0.003 (0.08)
0.100 (2.55)
0.089 (2.25)
0.020 (0.50)
0.012 (0.30)
0.004 (0.10) max
0.020 (0.50)
0.012 (0.30)
Dimensions in inches and (millimeters)
Limits
300
240
240
170
225
625
4.0
1.0
350
357
-65 to +150
Unit
V
V
V
V
mA
mA
A
mW
°C/W
°C
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Max
Reverse breakdown voltage
VBR
IR=100μA
300
Reverse leakage current
Forward voltage
VR=240V
IR
VR=240V , Tj = 150°C
IF=20mA
VF
IF=100mA
100
0.87
1.0
Diode capacitance
Reverse recovery time
CT
VR=0V, f=1MHz
5.0
IF = IR = 30mA,
trr
Irr = 3.0mA, RL = 100Ω
50
Company reserves the right to improve product design , functions and reliability without notice.
QW-B0054
Comchip Technology CO., LTD.
Unit
V
nA
μA
V
pF
ns
REV:A
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