CDSH6-4448-G_12 Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Switching Diode

SMD Switching Diode
CDSH6-4448-G
RoHS Device
Features
-Fast Switching Speed
-For general purpose switching applications.
-High conductance.
Mechanical data
-Case: SOT-563, Molded Plastic
-Terminals: Solderable per MIL-STD-202, Method
208
Marking: KAL
Circuit diagram
C1 NC A2
SOT-563
0.067(1.70)
0.059(1.50)
0.051(1.30)
0.043(1.10)
0.024(0.60)
0.021(0.52)
0.022(0.55)
0.018(0.45)
0.006(0.16)
0.004(0.09)
0.067(1.70)
0.059(1.50)
0.011(0.27)
0.007(0.17)
0.002(0.05)max
0.012(0.30)
0.004(0.10)
A1 NC C2
Dimensions in inches and (millimeters)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol
Non-repetitive peak reverse voltage
VRM
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VR
RMS reverse voltage
VR(RMS)
Forward continuous current
IFM
Averaged rectified output current
IO
Peak forward surge current @t=1.0μs
IFSM
@T=1.0s
Power dissipation
PD
Thermal resistance, junction to air
RθJA
Junction temperature
TJ
Storage temperature
TSTG
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Conditions
IR=2.5μA
VR=70V
VR=20V
IF=5mA
IF=10mA
IF=100mA
IF=150mA
VR=6V, f=1MHz
IF=IR=10mA, Irr=0.1×IR, RL=100Ω
Max
100
80
57
500
250
4
2
150
833
150
-65 to +150
Symbol
VBR
IR
VF
Min
80
0.62
CT
trr
QW-B0043
Comchip Technology CO., LTD.
Unit
V
V
V
mA
mA
A
mW
O_C/W
O_C
O_C
Max
A
0.1
25
0.72
0.855
1
1.25
3.5
4
Unit
V
μA
nA
V
pF
nS
REV:B
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