CDSH6-4448-G Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Switching Diode

SMD Switching Diode
CDSH6-4448-G
High Speed
RoHS Device
Features
-Fast Switching Speed
-For general purpose switching applications.
-High conductance.
Mechanical data
Case: SOT-563, Molded Plastic
Terminals: Solderable per MIL-STD-202, Method
208
Marking: KAL
Circuit diagram
C1 NC A2
COMCHIP
SOT-563
0.067(1.70)
0.059(1.50)
0.051(1.30)
0.043(1.10)
0.024(0.60)
0.021(0.52)
0.022(0.55)
0.018(0.45)
0.006(0.16)
0.004(0.09)
0.067(1.70)
0.059(1.50)
0.011(0.27)
0.007(0.17)
0.002(0.05)max
0.012(0.30)
0.004(0.10)
A1 NC C2
Dimensions in inches and (millimeters)
Maximum Rating (at TA=25
O
C unless otherwise noted)
Parameter
Symbol
Max
Unit
Non-repetitive peak reverse voltage
VRM
100
V
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VR
80
V
RMS reverse voltage
VR(RMS)
57
V
Forward continuous current
IFM
500
mA
Averaged rectified output current
IO
250
mA
Peak forward surge current @t=1.0μs
@T=1.0s
IFSM
4
2
A
Power dissipation
PD
150
mW
Thermal resistance, junction to air
RθJA
833
O_C/W
Junction temperature
TJ
150
O_C
Storage temperature
TSTG
-65 to +150
O_C
Electrical Characteristics (at TA=25
O
C unless otherwise noted)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Conditions
IR=2.5μA
VR=70V
VR=20V
IF=5mA
IF=10mA
IF=100mA
IF=150mA
VR=6V, f=1MHz
IF=IR=10mA, Irr=0.1×IR, RL=100Ω
Symbol
VBR
IR
VF
CT
trr
Min
80
0.62
Max Unit
A
V
0.1
μA
25
nA
0.72
0.855
1
V
1.25
3.5
pF
4
nS
QW-B0043
Comchip Technology CO., LTD.
REV:B
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