CDSH6-16-G_12 Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Switching Diode

SMD Switching Diode
CDSH6-16-G
RoHS Device
Features
-Fast Switching Speed
-For general purpose switching applications.
-High conductance.
Mechanical data
-Case: SOT-563, Molded Plastic
-Terminals: Solderable per MIL-STD-202, Method
208
Marking: KAM
Circuit diagram
C1 NC A2
SOT-563
0.067(1.70)
0.059(1.50)
0.051(1.30)
0.043(1.10)
0.024(0.60)
0.021(0.52)
0.022(0.55)
0.018(0.45)
0.006(0.16)
0.004(0.09)
0.067(1.70)
0.059(1.50)
0.011(0.27)
0.007(0.17)
0.002(0.05)max
0.012(0.30)
0.004(0.10)
A1 NC C2
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol
Dimensions in inches and (millimeters)
Max
Unit
Non-repetitive peak reverse voltage
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Forward continuous current
Averaged rectified output current
Peak forward surge current @t=1.0μs
@T=1.0s
Power dissipation
Thermal resistance, junction to air
Junction temperature
Storage temperature
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
PD
RθJA
TJ
TSTG
100
75
53
300
200
2
1
150
833
150
-65 to +150
V
V
V
mA
mA
A
mW
O_C/W
O_C
O_C
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Conditions
IR=100μA
VR=75V
VR=20V
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=0V, f=1MHz
IF=IR=10mA, Irr=0.1×IR, RL=100Ω
Symbol
VBR
IR
VF
CT
trr
Min
75
Max
A
1
25
0.715
0.855
1
1.25
2
4
Unit
V
μA
nA
V
pF
nS
QW-B0042
Comchip Technology CO., LTD.
REV:B
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