CDSF355B Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Switching Diode

SMD Switching Diode
CDSF355B ^{(RoHs Device)}
High Speed
SMD Diodes Specialist
Features
Designed for mounting on small surface.
Extremely thin/leadless package.
Low leakage current.
High mounting capability, strong surge
withstand, high reliability.
Mechanical data
Case: 1005(2512) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.006 gram(approx.).
1005(2512)
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.020(0.50) Typ.
0.035(0.90)
0.027(0.70)
0.040(1.00) Typ.
Dimensions in inches and (millimeter)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Repetitive peak reverse voltage
Conditions
Symbol _Min Typ _{Max Unit}
VRRM
90
V
Reverse voltage
VR
80
V
Average forward current
IO
100 mA
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method)
Repetitive peak forward current
Power Dissipation
Storage temperature
Junction temperature
IFSM
IFRM
PD
TSTG
Tj
1000
mA
225 mA
300 mW
-55
+125
O
C
+125
O
C
Electrical
Characteristics
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Forward voltage
Conditions
IF = 100 mA DC
Symbol _Min Typ _{Max Unit}
VF
1.0
V
Reverse current
VR = 80 V
IR
Capacitance between terminals f = 1 MHZ,and 0.5VDC reverse voltage
CT
Reverse recovery time
VR = 6V ,IF =10 mA, RL =50 ohms
Trr
0.1 uA
3
PF
4
nS
QW-A0009
REV:B
Page 1