CDBW46-G Datasheet, PDF (1/4 Pages) Comchip Technology – Small Signal Schottky Diodes

Small Signal Schottky Diodes
CDBW46-G
Reverse Voltage: 100 Volts
Forward Current: 150 mA
RoHS Device
Features
-Design for mounting on small surface.
-High breakdown voltage.
-Low trun-on voltage.
-Guard ring construction for transient protection.
Mechanical data
- Case: SOD-123, Molded Plastic
- Terminals: Solderable per MIL-STD-202, Method 208
- Approx. Weight: 0.04 gram
Comchip
SMD Diode Specialist
+
0.026(0.65)
0.018(0.45)
-
SOD-123
0.152(3.85)
0.140(3.55)
+
-
0.067(1.70)
0.059(1.50)
0.110(2.80)
0.102(2.60)
0.049(1.25)
0.041(1.05)
0.004(0.10)
Max.
0.006(0.15)
Max.
0.02(0.50) REF
Dimensions in inches and (millimeters)
Maximum Ratings (at Ta=25°C unless otherwise noted)
Parameter
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward continuous current
Repetitive Peak Forward current (Note 1)
Forward surge Forward current (Note 1)
Power dissipation
Thermal Resistance Junction to ambient air
Junction temperature
Conditions
Symbol
VRRM
VRWM
VR
IF
@tp<1.0s, Duty Cycle<50%
IFRM
@tp<10ms
IFSM
PD
RΘJA
Tj
Storage temperature
TSTG
Limits
100
150
350
750
200
625
150
-55 to +150
Unit
V
mA
mA
mA
mW
°C/W
°C
°C
Electrical Characteristics (at Ta=25°C unless otherwise noted)
Parameter
Reverse breakdown voltage (Note 2)
Conditions
IR=100µA
Symbol _Min Typ _{Max Unit}
VR
100
V
Forward voltage (Note 2)
IF1 = 0.1 mA
IF2 = 10mA
IF3 = 250mA
Reverse Voltage Leakage current
Diode capacitance
VR1 = 1.5V
VR2 = 10V
VR3 = 50V
VR4 = 75V
VR=0V, f = 1 MHZ
VR=1V, f = 1 MHZ
Notes: 1.Part mounted on FR-4 board with recommended pad layout.
2.Short duration pulse test used to minimize self-heating effect.
0.25
VF
0.45 V
1.0
0.3
IR
0.5
µA
1
2
20
CT
12
PF
QW-BA018
Comchip Technology CO., LTD.
REV:B
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