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CDBW120R-HF Datasheet, PDF (1/4 Pages) Comchip Technology – Low IR SMD Schottky Barrier Rectifiers
Low IR SMD Schottky Barrier Rectifiers
Comchip
SMD Diode Specialist
CDBW120R-HF Thru. CDBW1100R-HF
Reverse Voltage: 20 to 100 Volts
Forward Current: 1.0 Amp
RoHS Device
Halogen Free
SOD-123
Features
-Low Profile surface mount applications
in order to optimize board space.
-Low power loss, high efficiency.
-Hight current capability, low forward voltage drop.
-Hight surge capability.
-Guarding for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip,metal silicon junction.
0.026(0.65)
0.018(0.45)
0.152(3.85)
0.140(3.55)
0.110(2.80)
0.102(2.60)
0.067(1.70)
0.059(1.50)
Mechanical data
0.049(1.25)
0.041(1.05)
0.006 (0.15)
0.003 (0.08)
-Epoxy: UL94-V0 rate flame retardant.
-Case: Molded plastic, SOD-123
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Indicated by cathode band.
-weight: 0.010 grams
0.004(0.10) Max.
0.02 (0.50) REF
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
O
Ratings at Ta=25 C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
Parameter
Symbol CDBW
120R-HF
CDBW
130R-HF
CDBW
140R-HF
Max. Repetitive Peak Reverse Voltage
VRRM
20
30
40
Max. DC Blocking Voltage
VDC
20
30
28
CDBW
160R-HF
60
42
CDBW
1100R-G
100
Units
V
70
V
Max. RMS voltage
Max. Instantaneous Forward Voltage @
1.0A, TA=25°C
Operating Temperature
VRMS
VF
TJ
14
21
0.52
40
60
0.55
0.75
-50 to +150
100
V
0.86
V
°C
Parameter
Conditions
Symbol
Forward Rectified Current See Fig.1
IO
8.3ms single half sine-wave superimposed
Forward Surge Current
on rate load (JEDEC method)
IFSM
VR =VRRM TA=25°C
IR
Reverse Current
VR =VRRM TA=100°C
IR
Thermal Resistance
Junction to ambient
RθJA
Diode Junction Capacitance f=1MHZ and applied 4V DC reverse Voltage CJ
Storage Temperature
TSTG
MIN.
-50
QW-JL011
Comchip Technology CO., LTD.
TYP.
88
120
MAX.
1.0
5.5
0.1
20
+150
Units
A
A
mA
mA
°C/W
pF
°C
REV: A
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