CDBW120-G_12 Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Schottky Barrier Diodes

SMD Schottky Barrier Diodes
CDBW120-G Thru. CDBW140-G
Forward current: 1.0A
Reverse voltage: 20 to 40V
RoHS Device
Features
SOD-123
-For use in low voltage, high frequency inverters.
-Free wheeling, and polarity protection applications.
Mechanical Data
-Case: SOD-123, molded plastic.
-Terminals: solderable per MIL-STD-750, method
2026.
-Polarity: indicated by cathode end.
-Weight: 0.0097 gram(approx.).
Marking
CDBW120-G: SJ
CDBW130-G: SK
CDBW140-G: SL
Maximum Ratings (At Ta=25°C, unless otherwise noted)
0.026 (0.65)
0.018 (0.45)
0.152 (3.85)
0.140 (3.55)
0.110 (2.80)
0.102 (2.60)
0.067 (1.70)
0.059 (1.50)
0.049 (1.25)
0.041 (1.05)
0.004 (0.10)max
0.006 (0.15)max
0.02 (0.50)REF
Dimensions in inches and (millimeter)
Parameter
Symbol CDBW120-G
CDBW130-G
CDBW140-G Unit
Non-repetitive peak reverse voltage
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
VRM
20
30
40
V
VRRM
VRWM
20
30
40
V
VR
RMS reverse voltage
VR(RMS)
14
21
28
V
Average rectified output current
IO
1
A
Peak forward surge current @8.3ms
IFSM
25
A
Repetitive peak forward current
IFRM
625
mA
Power dissipation
PD
250
mW
Thermal resistance, junction to ambient
RθJA
500
°C/W
Storage temperature
TSTG
-65 ~ +150
°C
Electrical Characteristics (At Ta=25°C, unless otherwise noted)
Parameter
Conditions
Symbol
CDBW120-G
Reverse breakdown voltage
CDBW130-G IR=1mA
VBR
CDBW140-G
CDBW120-G VR=20V
Reverse voltage leakage current CDBW130-G VR=30V
IR
CDBW140-G VR=40V
CDBW120-G
CDBW130-G IF=1A
CDBW140-G
Forward voltage
VF
CDBW120-G
CDBW130-G IF=3A
CDBW140-G
Diode capacitance
VR=4V, f=1MHz
CD
Min.
20
30
40
Max.
1
0.45
0.55
0.60
0.75
0.875
0.90
120
Unit
V
mA
V
pF
QW-BB020
Comchip Technology CO., LTD.
REV:D
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