CDBW0520L-G_12 Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Schottky Barrier Diodes

SMD Schottky Barrier Diodes
CDBW0520L-G Thru. CDBW0540-G
Reverse Voltage: 20 to 40 Volts
Forward Current: 0.5 Amp
RoHS Device
Features
-Low turn on voltage.
-Fast switching.
-PN junction guard ring for transient and ESD
protection.
0.028(0.70)
0.019(0.50)
SOD-123
0.110(2.80)
0.098(2.50)
0.071(1.80)
0.055(1.40)
Mechanical data
-Case: SOD-123, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Color band denotes cathode end.
-Weight: 0.0097 gram(approx.).
Marking
CDBW0520L-G: SD
CDBW0530-G: SE
CDBW0540-G: SF
0.154(3.90)
0.141(3.60)
0.053(1.35)
0.037(0.95)
0.005(0.12)
Max.
0.008(0.20)
Max.
0.016(0.40)
Min.
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics (At Ta=25°C, unless otherwise noted)
Parameter
Max. repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
Max. average forward current
Max. forward voltage
Symbol
VRRM
VDC
VRMS
CDBW0520L-G
20
20
14
IFSM
IO
0.3@IF=0.1A
VF
0.385@IF=0.5A
CDBW0530-G
30
30
21
5.5
0.5
0.375@IF=0.1A
0.430@IF=0.5A
CDBW0540-G
40
40
28
Units
V
V
V
A
A
0.51@IF=0.5A
V
0.62@IF=1.0A
Max. reverse current
0.075@VR=10V
0.02@VR=15V
0.01@VR=20V
IR
0.25@VR=20V
0.13@VR=30V
0.02@VR=40V
RθJA
206
Max. thermal resistance (Note 1)
RθJL
150
Max. operating junction temperature
TJ
125
Storage temperature
TSTG
-55 to +125
Notes: 1. Thermal resistance from junction to ambient and junction to lead, mounted on P.C.B. with 0.2×0.2 inch copper p²ad area.
mA
°C/W
°C
°C
QW-BB001
Comchip Technology CO., LTD.
REV:B
Page 1