CDBV6-00340TI-G Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Schottky Barrier Diode Arrays

SMD Schottky Barrier Diode Arrays
CDBV6-00340TI-G
Forward Current: 30mA
Reverse Voltage: 40V
RoHS Device
SMD Diodes Specialist
Features
-Low forward voltage drop.
-Fast switching.
-Ultra-small surface mount package.
-PN junction guard ring for transient and ESD
protection.
-Available in lead Free version.
Mechanical data
-Case: SOT-363, Molded Plastic
-Case material: UL 94V-0 flammability retardant
classification.
-Terminals: Solderable per MIL-STD-202, Method
208
-Marking: Orientation: See diagrams below
-Weight: 0.006 grams (approx.)
-Marking: 731
6
5
4
SOT-363
0.087(2.20)
0.071(1.80)
0.053(1.35)
0.045(1.15)
0.044(1.10)
0.035(0.90)
0.056(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.096(2.45)
0.085(2.15)
0.014(0.35)
0.006(0.15)
0.004(0.10)max
0.010(0.25)min
Dimensions in inches and (millimeters)
Q1
Q2
Q3
12
4
CDBV6-00340TI-G
*Symmetrical configuration, no orientation indicator.
Maximum Rating (at TA=25℃ unless otherwise noted)
Parameter
Peak repetitive reverse voltage
DC blocking voltage
Forward continuous current
Forward surge current (Note 1) @t<1.0s
Operation and storage temperature range
Operation and storage temperature range
Symbol
VRM
VR
IF
IFSM
TJ
TSTG
Limits
40
40
30
200
125
-40 ~ +125
Unit
V
V
mA
mA
O_C
O_C
Electrical Characteristics (at TA=25℃unless otherwise noted)
Parameter
Forward voltage
Reverse leakage current
Total capacitance
Notes1 : 60HZ * 1 Cyc.
Conditions
IF=1mA
VR=10V
VR=1.0V, f=1.0MHz
Symbol _Min Typ _{Max Unit}
VF
0.37 mV
IR
1
μA
CT
2
pF
QW-BA017
REV:B
Page 1