CDBV3-40-G Datasheet, PDF (1/2 Pages) Comchip Technology – Small Signal Schottky Diodes

Smal l Signal Sch ottky Diodes
CDBV3-40/S/C/A-G
Reverse Voltage: 40 Volts
Forward Current: 200 mA
RoHS Device
COMCHIP
SMD Diodes Specialist
Features
-Design for mounting on small surface.
-High speed switching application, circuit
protection.
-Low turn-on voltage.
Mechanical data
-Case: SOT-323, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Approx. weight: 0.006 grams
Circuit diagram
3
3
3
3
1
2
1
2
1
2
1
2
SOT-323
0.087(2.20)
0.070(1.80)
3
0.054(1.35)
0.045(1.15)
1
2
0.056(1.40)
0.047(1.20)
0.006(0.15)
0.002(0.05)
0.044(1.10)
0.035(0.90)
0.087(2.20)
0.078(2.00)
0.016(0.40)
0.008(0.20)
0.004(0.10)max.
0.004(0.10)min.
CDBV3-40-G CDBV3-40S-G CDBV3-40C-G CDBV3-40A-G
Marking Code:43 Mark Code:44 Marking Code: 45 Marking Code: 46
Maximum Ratings (at Ta=25^OC unless otherwise noted)
Dimensions in inches and (millimeter)
Parameter
Symbol
Value
Units
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward continuous current
Peak surge forward current (T=1.0sec)
Power dissipation
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
VRRM
VRWM
VR
IFM
IFSM
PD
RθJA
TJ
TSTG
40
200
0.6
150
833
125
-65 to +125
V
mA
A
mW
O_C/W
O_C
O_C
Electrical Characteristics (at Ta=25^OC unless otherwise noted)
Parameter
Symbol
Conditions
Reverse breakdown voltage
Reverse voltage leakage current
VBR
IR=10μA
IR
VR=30V
Forward voltage
IF=1mA
VF
IF=40mA
Diode capacitance
Reverse recovery time
CD
VR=0V, f=1.0MHz
Irr=1mA, IF=IR=10mA,
Trr
RL=100Ω
Min.
40
QW-BA005
Comchip Technology CO., LTD.
Max.
200
380
1000
5
5
Units
V
nA
mV
pF
nS
REV:B
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