CDBV3-0720-G Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBV3-0720-G
Io = 700 mA
VR = 20 Volts
RoHS Device
Features
-Low-power rectification
-For switching power supply
-Ultra low VF
Mechanical data
-Case:SOT-323, molded plastic.
-Terminals:Soldeable per MIL-STD-750,
method 2026.
-Mounting position: Any.
-Approx.weight: 0.0055 gram.
Circuit Diagram
3
SOT-323
0.053(1.35)
0.045(1.15)
0.087(2.20)
0.079(2.00)
3
1
2
0.055(1.40)
0.047(1.20)
0.039(1.00)
0.035(0.90)
0.006(0.15)
0.003(0.08)
0.096(2.45)
0.085(2.15)
0.016(0.40)
0.008(0.20)
0.004(0.10)
0.000(0.00)
0.018(0.46)
0.010(0.26)
Dimensions in inches and (millimeter)
12
Maximum Rating (at Ta=25°C unless otherwise noted)
Parameter
Symbol _Limit
Non-Repetitive Peak Reverse Voltage
VRM
25
DC Blocking Voltage
VR
20
Average Rectified Output Current
IO
700
Power Dissipation
Junction Temperature
PD
150
Tj
125
Storage Temperature
TSTG
-55~+150
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics (at Ta=25°C unless otherwise noded)
Parameter
Symbol Test Conditions Min Max Unit
Reverse breakdown voltage
V(BR)
IR =200μA
20
V
Reverse voltage leakage current
IR
VR = 20V
200
μA
Forward voltage
VF
IF = 700mA
0.49
V
Company reserves the right to improve product design , functions and reliability without notice.
QW-BB057
Comchip Technology CO., LTD.
REV:A
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