CDBV220-G Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Schottky Barrier Diodes

SMD Schottky Barrier Diodes
CDBV220-G
Forward current: 2.0A
Reverse voltage: 20V
RoHS Device
Features
- Low Forward Voltage Drop.
- Very Small SMD Package.
Mechanical Data
- Case: SOD-323, molded plastic.
- Terminals: Solderable per MIL-STD-750, method
2026.
- Polarity: Indicated by cathode end.
Circuit Diagram
0.014 (0.35)
0.010 (0.25)
SOD-323
0.108 (2.75)
0.100 (2.55)
0.071 (1.80)
0.063 (1.60)
0.055 (1.40)
0.047 (1.20)
0.039 (1.00)
MAX.
0.004 (0.10)
0.000 (0.00)
0.006 (0.15)
0.003 (0.08)
0.019 (0.475)REF
Dimensions in inches and (millimeter)
Maximum Ratings (At Ta=25°C, unless otherwise noted)
Parameter
Symbol
Peak repetitive reverse voltage
Working peak reverse voltage
VRRM
VRWM
RMS reverse voltage
VR(RMS)
Continuous forward current
IF
Non-repetitive peak forward surge current @ t=8.3ms
IFSM
Power dissipation
(Note 1)
PD
(Note 2)
Thermal resistance from junction to ambient
(Note 1)
RθJA
(Note 2)
Junction temperature range
TJ
Storage temperature range
TSTG
Note: (1) Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
(2) Device mounted on an FR4 PCB with copper pad 10 x 10 mm.
CDBV220-G
20
14
2
9
250
480
400
208
-40 ~ +125
-55 ~ +150
Unit
V
V
A
A
mW
°C/W
°C
°C
Electrical Characteristics (At Ta=25°C, unless otherwise noted)
Parameter
Conditions
Symbol
Min.
Max.
Unit
Reverse breakdown voltage
IR = 1mA
V(BR)
20
V
Reverse current
VR = 10V
IR
VR = 20V
IF = 1A
Forward voltage (Note 1)
VF
IF = 2A
80
μA
100
0.45
V
0.55
Total capacitance
VR = 4V, f = 1MHz
Ctot
120
pF
Note: (1) Pulse test: tp ≤ 300μs ; δ ≤ 0.02
Company reserves the right to improve product design , functions and reliability without notice.
QW-BB050
Comchip Technology CO., LTD.
REV: A
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