CDBV120-G_12 Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Schottky Barrier Diodes

SMD Schottky Barrier Diodes
CDBV120-G Thru. CDBV140-G
Forward current: 1.0A
Reverse voltage: 20 to 40V
RoHS Device
Features
-For use in low voltage, high frequency inverters.
-Free wheeling, and polarity protection applications.
Mechanical Data
-Case: SOD-323, molded plastic.
-Terminals: solderable per MIL-STD-750, method
2026.
-Polarity: indicated by cathode end.
0.014 (0.35)
0.010 (0.25)
SOD-323
0.106 (2.70)
0.098 (2.50)
0.071 (1.80)
0.063 (1.60)
0.055 (1.40)
0.047 (1.20)
Marking
CDBV120-G: SJ
CDBV130-G: SK
CDBV140-G: SL
Maximum Ratings (At Ta=25°C, unless otherwise noted)
0.035 (0.90)
0.031 (0.80)
0.004 (0.10)max
0.006 (0.150)
0.003 (0.080)
0.019 (0.475)REF
Dimensions in inches and (millimeter)
Parameter
Symbol CDBV120-G
CDBV130-G
CDBV140-G Unit
Non-repetitive peak reverse voltage
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
VRM
20
30
40
V
VRRM
VRWM
20
30
40
V
VR
RMS reverse voltage
VR(RMS)
14
21
28
V
Average rectified output current
IO
1
A
Peak forward surge current @8.3ms
IFSM
9
A
Repetitive peak forward current
IFRM
1.5
A
Power dissipation
PD
250
mW
Thermal resistance, junction to ambient
RθJA
500
°C/W
Storage temperature
TSTG
-65 ~ +150
°C
Electrical Characteristics (At Ta=25°C, unless otherwise noted)
Parameter
Conditions
Symbol
CDBV120-G
Reverse breakdown voltage
CDBV130-G IR=1mA
VBR
CDBV140-G
CDBV120-G VR=20V
Reverse voltage leakage current
CDBV130-G VR=30V
IR
CDBV140-G VR=40V
CDBV120-G
CDBV130-G IF=1A
CDBV140-G
Forward voltage
VF
CDBV120-G
CDBV130-G IF=3A
CDBV140-G
Diode capacitance
VR=4V, f=1MHz
CD
Min.
20
30
40
Max.
1
0.45
0.55
0.60
0.75
0.875
0.90
120
Unit
V
mA
V
pF
QW-BB015
Comchip Technology CO., LTD.
REV:B
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