CDBV120-G Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBV120-G THRU. CDBV140-G
IO=1.0A
VR=20 ~ 40V
RoHS Device
SMD Diodes Specialist
Features
-For use in low voltage, high frequency inverters.
-Free wheeling, and polarity protection applications.
Mechanical Data
-Case: Molded plastic SOD-323
-Terminals: Solderable per MIL-STD-750, Method
2026.1.
-Polarity: Indicated by cathode band.
-Mounting position: Any.
-Marking:
CDBV120-G : SJ
CDBV130-G : SK
CDBV140-G : SL
SOD-323
0.014 (0.35)
0.010 (0.25)
0.071 (1.80)
0.063 (1.60)
0.106 (2.70)
0.098 (2.50)
0.039 (1.00)max
0.004 (0.10)max
0.055 (1.40)
0.047 (1.20)
0.006 (0.15)
0.003 (0.08)
0.019 (0.475)REF.
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25^OC unless otherwise specified)
Parameter
Non-repetitive peak reverse voltage
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Peak forward surge current @Tp=8.3mS
Repetitive peak forward current
Power dissipation
Thermal resistance (junction to ambient)
Storage temperature
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
IFRM
PD
RθJA
TSTG
CDBV120-G
20
20
14
CDBV130-G
30
30
21
1
25
625
200
625
-65~+150
CDBV140-G
40
40
28
Unit
V
V
V
A
A
mA
mW
O_C/W
O_C
Electrical Characteristics (at TA=25^OC unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse leakage current
Forward voltage
Diode Capacitance
Conditions
IR=1mA
CDBV120-G
CDBV130-G
CDBV140-G
VR=20V
VR=30V
VR=40V
CDBV120-G
CDBV130-G
CDBV140-G
IF=1.0A
CDBV120-G
CDBV130-G
CDBV140-G
IF=3.0A
CDBV120-G
CDBV130-G
CDBV140-G
VR=4V, f=1MHz
Symbol
VBR
IR
VF
VF
CD
Min.
20
30
40
Max.
1
0.45
0.55
0.60
0.75
0.875
0.90
120
QW-BB015
Unit
V
mA
V
V
pF
REV:A
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