CDBUR0245-HF Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBUR0245-HF
Io = 200 mA
VR = 45 Volts
RoHS Device
Halogen Free
Features
-Designed for mounting on small surface.
-Extremely thin/leadless package.
-Low leakage current (IR=0.1uA typ.@VR=10V).
-Majority carrier conduction.
Mechanical data
-Case: 0603/SOD-523F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & B6
-Mounting position: Any
-Weight: 0.003 gram(approx.).
0603/SOD-523F
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
0.018(0.45) Typ.
0.033(0.85)
0.027(0.70)
0.028(0.70) Typ.
Dimensions in inches and (millimeter)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Conditions
Symbol _Min Typ _{Max Unit}
VRRM
50
V
VR
45
V
IO
200 ^mA
Forward current,surge peak
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
IFSM
2000
mA
Power Dissipation
Storage temperature
Junction temperature
PD
TSTG
-40
Tj
-40
150 mW
+125
O
C
+125
O
C
Electrical
Characteristics
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Forward voltage
IF = 200 mA DC
Reverse current
VR = 10 V
Capacitance between terminals f = 1 MHZ, and 10VDC reverse voltage
Symbol _Min Typ _{Max Unit}
VF
0.55 V
IR
1
uA
CT
9
PF
QW-G1069
Comchip Technology CO., LTD.
REV:A
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