CDBU0230-HF Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBU0230-HF ^{(RoHS Device)}
Io = 200 mA
VR = 30 Volts
SMD Diodes Specialist
Features
Halogen free.
Designed for mounting on small surface.
Extremely thin/leadless package.
Low drop-down voltage.
Majority carrier conduction.
Mechanical data
Case: 0603(1608) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking code: cathode band & B5
Mounting position: Any
Weight: 0.003 gram(approx.).
0603(1608)
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
0.014(0.35) Typ.
0.033(0.85)
0.027(0.70)
0.012 (0.30) Typ.
0.028(0.70) Typ.
Dimensions in inches and (millimeter)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Symbol _Min Typ _{Max Unit}
Repetitive peak reverse voltage
VRRM
35
V
Reverse voltage
VR
30
V
Average forward current
IO
200 mA
Forward current,surge peak
Power Dissipation
Sunction temperature
Junction temperature
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
IFSM
PD
TSTG
Tj
3000
mA
150 mW
-40
+125
O
C
+125
O
C
Electrical
Characteristics
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
IF = 200 mA DC
VF
0.50 V
Reverse current
VR = 30V
IR
Capacitance between terimnals F = 1 MHZ and 10 VDC reverse voltage
CT
30 uA
9
pF
QW-G1064
Comchip Technology CO., LTD.
REV:A
Page 1