CDBU0140L Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
CDBU0140L ^{(Lead-free Device)}
Io = 100 mA
VR = 40 Volt s
Features
Low forward Voltage
Designed for mounting on small surface.
Extremely thin/leadless package.
Majority carrier conduction.
Mechanical data
COMCHIP
SMD Diodes Specialist
0603(1608)
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
Case: SOD-523F (1608) Standard
package , molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any.
Weight: 0.003 gram (approximately).
0.014(0.35) Typ.
0.033(0.85)
0.027(0.70)
0.012 (0.30) Typ.
0.018(0.45) Typ.
Dimensions in inches and (millimeter)
Maximum Rating ( at T A = 25 C unless otherwise noted )
Parameter
Conditions
Symbol Min Typ Max Unit
Repetitive peak reverse voltage
VRRM
45
V
Reverse voltage
VR
40
V
Average forward rectified
current
Forward current , surge peak
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
Io
IFSM
100 mA
1
A
Storage temperature
Junction temperature
TSTG
-40
Tj
-40
+125 C
+125 C
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
Parameter
Conditions
Forward voltage
I F = 100 mA
I F = 10 mA
Reverse current
VR = 10 V
Capacitance between terminals f = 1MHz, and 10 VDC reverse voltage
Symbol Min Typ Max Unit
VF
0.55 V
VF
0.34 V
IR
30
uA
CT
6
pF
QW-A1013
REV:A
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